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 v02.0802
MICROWAVE CORPORATION
HMC130
GaAs MMIC DOUBLE-BALANCED MIXER, 6 - 11 GHz
Features
Conversion Loss: 7 dB LO to RF and IF Isolation: >32 dB Input IP3: +17 dBm
Typical Applications
The HMC130 is ideal for: * Microwave & VSAT Radios * Test Equipment * Military EW, ECM, C I * Space Telecom
3
Small Size, No DC Bias Required
Functional Diagram
General Description
The HMC130 chip is a miniature double-balanced mixer which can be used as an upconverter or downconverter in the 6 to 11 GHz band. The chip can be integrated directly into hybrid MMIC's without DC bias or external baluns to provide an extremely compact mixer. It is ideally suited for applications where small size, no DC Bias, and consistent IC performance are required. This mixer can operate over a wide LO drive input of +9 to +15 dBm. It performs equally well as a BiPhase modulator or demodulator. See HMC137 data sheet
5
MIXERS - CHIP
Electrical Specifications, TA = +25 C, LO Drive = +15 dBm
Parameter
Frequency Range, RF & LO Frequency Range, IF Conversion Loss Noise Figure (SSB) LO to RF Isolation LO to IF Isolation IP3 (Input) IP2 (Input) 1 dB Gain Compression (Input) 32 35 13 45 6
Min.
Typ.
6.0 - 11.0 DC - 2.0 7 7 40 40 17 55 9
Max.
Units
GHz GHz
9 9
dB dB dB dB dBm dBm dBm
* Unless otherwise noted, all measurements performed as downconverter, IF = 100 MHz
5 - 14
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
v02.0802
MICROWAVE CORPORATION
HMC130
GaAs MMIC DOUBLE-BALANCED MIXER, 6 - 11 GHz
Conversion Gain vs. Temperature @ LO = +15 dBm
0
Isolation @ LO = +15dBm
-10 -15
CONVERSION GAIN (dB)
-5
-20 ISOLATION (dB) -25 -30 -35 -40 -45
RF/IF LO/RF LO/IF
-10
+ 25 C + 85 C - 55 C
-15
-20 5 6 7 8 9 10 11 12 13 FREQUENCY (GHz)
-50 5 6 7 8 9 10 11 12 13 FREQUENCY (GHz)
5
MIXERS - CHIP
Conversion Gain vs. LO Drive
0
Return Loss @ LO = +15 dBm
0
CONVERSION GAIN (dB)
-5 Return Loss (dB)
-5
-10
-10
+ 9 dBm + 11 dBm + 13 dBm + 15 dBm
-15
LO RF
-15
-20
-20 5 6 7 8 9 10 11 12 13 FREQUENCY (GHz)
-25 4 5 6 7 8 9 10 11 12 13 14 Frequency (GHz)
IF Bandwidth @ LO = +15 dBm
0
Upconverter Performance Conversion Gain vs. LO Drive
0
CONVERSION GAIN (dB)
-5 RESPONSE (dB)
-5
-10
-10
+ 9 dBm + 11 dBm + 13 dBm + 15 dBm
-15
IF CONVERSION LOSS IF RETURN LOSS (dB)
-15
-20 0 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz)
-20 5 6 7 8 9 10 FREQUENCY (GHz) 11 12 13
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
5 - 15
v02.0802
MICROWAVE CORPORATION
HMC130
GaAs MMIC DOUBLE-BALANCED MIXER, 6 - 11 GHz
Input IP3 vs. LO Drive
30
Input IP3 vs. Temperature @ LO = +15 dBm
30
25 INPUT IP3 (dBm)
INPUT IP3 (dBm)
+11 dBm + 13 dBm + 15 dBm
25
+ 25 C + 85 C - 55 C
20
20
15
15
5
MIXERS - CHIP
10 5 6 7 8 9 10 FREQUENCY (GHz) 11 12 13
10 4 5 6 7 8 9 10 11 12 13 FREQUENCY (GHz)
Input IP2 vs. LO Drive
80 75 70 IP2 (dBm) 65 60 55 50 45 40 5 6 7 8 9 10 11 12 13 FREQUENCY (GHz)
+ 11 dBm + 13 dBm + 15 dBm
Input IP2 vs. Temperature @ LO = +15 dBm
80 75 70 INPUT IP2 (dBm) 65 60 55 50 45 40 5 6 7 8 9 10 11 12 13 FREQUENCY (GHz)
+ 25 C + 85 C - 55 C
Input P1dB vs. Temperature @ LO = +15 dBm
13
12 P1dB (dBm)
+ 25 C + 85 C - 55 C
11
10
9
8 6 7 8 9 10 11 12 13 FREQUENCY (GHz)
5 - 16
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
MICROWAVE CORPORATION
v02.0802
HMC130
GaAs MMIC DOUBLE-BALANCED MIXER, 6 - 11 GHz
MxN Spurious @ IF Port
nLO mRF 0 1 2 3 4 0 xx 12.83 69.0 75.33 66.83 1 17.16 0 76.5 76.16 74.83 2 26.0 39.83 57.83 78 77.33 3 9.0 53.0 76.83 61.66 78.16 4 37.33 33.66 71.0 78.16 79.66
Harmonics of LO
nLO Spur @ RF Port LO Freq. (GHz) 9.0 10.5 12.0 13.5 15.0 16.5 1 45 42 36 35 35 32 2 56 56 54 69 58 49 3 46 56 43 38 44 40 4 79 62 60 57 ? ?
RF Freq. = 9.1 GHz @ -10 dBm LO Freq. = 9.0 GHz @ +13 dBm Measured as downconverter
5
MIXERS - CHIP
5 - 17
LO = +13 dBm All values in dBc below input LO level measured at RF port
Absolute Maximum Ratings
LO Drive Storage Temperature Operating Temperature +27 dBm -65 to +150 C -55 to +85 C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
MICROWAVE CORPORATION
v02.0802
HMC130
GaAs MMIC DOUBLE-BALANCED MIXER, 6 - 11 GHz
Outline Drawing
5
MIXERS - CHIP
NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. BOND PADS ARE .004" SQUARE 3. TYPICAL BOND PAD SPACING CENTER TO CENTER IS .006" EXCEPT AS SHOWN 4. DIE THICKNESS = .004" [.100 MM] 5. BACKSIDE METALIZATION: GOLD 6. BACKSIDE METAL IS GROUND 7. BOND PAD METALIZATION: GOLD
Pad Descriptions
Pad Number Function Description Interface Schematic
1
LO
This pin is DC coupled and matched to 50 Ohm from 6 to 11 GHz.
2
IF
This pin is DC coupled. For applications not requiring operation to DC, this port should be DC blocked externally using a series capacitor whose value has been chosen to pass the necessary IF frequency range. For operation to DC this pin must not source or sink more than 2mA of current or die nonfunction and possible die failure will result.
3
RF
This pin is DC coupled and matched to 50 Ohm from 6 to 11 GHz.
GND
The backside of the die must connect to RF ground.
5 - 18
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
MICROWAVE CORPORATION
v02.0802
HMC130
GaAs MMIC DOUBLE-BALANCED MIXER, 6 - 11 GHz
Assembly Diagram
5
MIXERS - CHIP
5 - 19
Handling Precautions
Follow these precautions to avoid permanent damage. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 C and a tool temperature of 265 C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 C. DO NOT expose the chip to a temperature greater than 320 C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule.
Wire Bonding
Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com


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